A Low Temperature, Low Stress SiGe Process
نویسندگان
چکیده
In this project, we developed a low temperature (≤450C) silicon-germanium (SiGe) process using the Thermcopoly1/2 furnaces at SNF. Low stress (≤100MPa) poly SiGe has been successfully demonstrated with a deposition temperature below 450C and desired Si to Ge content ratio. Our SiGe deposition process is CMOS compatible and can enable a number of applications for microelectromechanical systems (MEMS), especially monolithic integration of MEMS on top of CMOS. Low stresses in our deposited SiGe have been confirmed by patterning the SiGe into various MEMS structures, (i.e., cantilevers, Guckel Rings). Functional nanoscale electromechanical relays with B doped SiGe have been demonstrated. Additionally, our recipe can also be used to deposit Ge below 400C, which can be etched by H2O2 and provides alternative choice for MEMS sacrificial layers.
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